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1200MHz to 2500MHz Adjustable
RF Predistorter
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2009 EV kit, V CCG = V CCP = +4.75V to +5.25V, 50 Ω environment, P IN = -20dBm, f IN = 1200MHz to 2500MHz, V GCS = +1.0V,
V GFS = +5.0V, V GBP = +1.2V, V PBIN = V PDCS1 = V PDCS2 = 0V, V PF_S1 = +5V, V PBRAW = V PBEXP , T A = -40 ° C to +85 ° C. Typical values
are at f IN = 2140MHz, V CCG = V CCP = +5V, T A = +25 ° C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
GAIN CONTROL SECTION
-16
Nominal Gain
Gain Variation Over Temperature
Gain Flatness
Gain-Expansion Breakpoint
Maximum
Gain-Expansion Breakpoint
Minimum
Gain-Expansion Breakpoint
Variation Over Temperature
Gain Expansion
Gain-Expansion Slope
Gain Slope Variation Over
Temperature
Noise Figure
Absolute Group Delay
Group Delay Ripple
Phase Ripple
Parasitic Phase Expansion
V GCS = 0V, V GFS = +5V
V GCS = +5V, V GFS = 0V
T A = -40 ° C to +85 ° C
Over a 100MHz band
V GBP = +5V
V GBP = +0.5V
T A = -40 ° C to +85 ° C
V GFS = +5V, P IN = -20dBm to +23dBm
V GFS = 0V, P IN = -20dBm to +23dBm
V GFS = +5V, P IN = +15dBm
V GFS = +0V, P IN = +15dBm
P IN = +15dBm, T A = -40 ° C to +85 ° C
Interconnects de-embedded
Over a 100MHz band
Over a 100MHz band, deviation from linear phase
P IN = -20dBm to +23dBm
-23
-8.5
-1
± 0.3
23
-3
-0.3
6.6
3.6
0.5
0.26
-0.04
16
0.61
± 0.01
± 0.07
5
dB
dB
dB
dBm
dBm
dB
dB
dB/dB
dB/dB
dB
ns
ns
Degrees
Degrees
Note 1: Guaranteed by design and characterization.
Note 2: All limits reflect losses and characteristics of external components shown in the Typical Application Circuit , unless otherwise
noted.
4
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